SiC Silicon Carbide Sintering Furnace

Silicon Carbide Vacuum Sintering Furnace Description:

Silicon carbide vacuum sintering furnace is specially designed for the sintering process of SiC products in high-performance ceramic materials. It is suitable for different process paths such as pressureless solid phase sintering (SSiC), pressureless liquid phase sintering (LSiC), and recrystallization sintering (RSiC). The vacuum sintering furnace can also sinter other ceramic products, such as silicon nitride. It has a debinding and dust removal system for debinding and sintering processes in one go. This series of equipment supports vacuum, argon, nitrogen, and other protective atmosphere environments, and the maximum temperature can reach 2400°C, ensuring high density and stable performance of silicon carbide products.

Silicon Carbide Vacuum Sintering Furnace Application

High-performance ceramic structural parts

Mechanical sealing rings, nozzles, rollers, and other industrial parts

Semiconductor thermal field components

Sintering of wear-resistant and corrosion-resistant parts

Ceramic materials for military and aerospace

Pressureless Sintering Furnace Technical Parameters:

Recrystallization Sintering Furnace Main features:

• Ultra-high temperature capability: The maximum temperature can be 2100°C / 2200°C / 2300°C to meet different silicon carbide sintering requirements.
• Controlled atmosphere system: supports vacuum sintering and protective atmosphere sintering (argon, nitrogen, etc.).
• Intelligent control: Adopts PLC+touch screen operating system to realize program temperature control, historical data recording, abnormal alarm and other functions.
• High-quality thermal insulation system: multi-layer composite thermal insulation structure, excellent thermal insulation performance and low energy consumption.
• Modular design: easy to maintain and upgrade, suitable for different specifications of molds and product batches.